Technical datasheet for Hitachi 2SK1056, 2SK1057, and 2SK1058 Silicon N-Channel MOS FETs, detailing electrical characteristics, ratings, and application.
This document is a technical datasheet for the Hitachi 2SK1056, 2SK1057, and 2SK1058 Silicon N-Channel MOS FETs. These devices are designed for low-frequency power amplifier applications and feature good frequency characteristics and high-speed switching capabilities. The datasheet includes typical output and transfer characteristics, safe operation areas, and switching time data.
| Drain to source voltage (2SK1056) | 120 V |
|---|---|
| Gate to source voltage | -15 V |
| Drain current | 7A |
| Channel dissipation | 100 W |
| Channel temperature | 150 °C |
| Storage temperature | -55 to +150 °C |
| Package type | TO-3P |
They are suitable for low frequency power amplifiers and can be used as a complementary pair with 2SJ160, 2SJ161 and 2SJ162.
Key features include good frequency characteristic, high speed switching, wide area of safe operation, and enhancement-mode operation.
The maximum channel temperature (Tch) is 150 °C.