ST198A is a single-beam reflective infrared photoelectric sensor, which consists of high-power infrared light-emitting diodes and high-sensitivity photoelectric transistors. It has a detection distance of 2-10mm.
The ST198A is a single‑beam reflective infrared photoelectric sensor that uses a high‑emission‑power IR diode and a high‑sensitivity phototransistor. It provides a detection distance of 2‑10 mm and is suitable for various automation applications.
The datasheet lists the sensor's electrical parameters, such as forward current 50 mA, reverse voltage 6 V, power dissipation 75 mW, and operating temperature range from –20 °C to +65 °C, as well as its mechanical dimensions and response time. This manual is written in Chinese.
| Forward current (IF) | 50 mA |
|---|---|
| Reverse voltage (Vr) | 6 V |
| Power dissipation (P) | 75 mW |
| Collector‑emitter voltage (Vceo) | 25 V |
| Collector‑emitter voltage (Veco) | 6 V |
| Collector power (Pc) | 50 mW |
| Operating temperature (Topr) | -20 ~ +65 °C |
| Storage temperature (Tstg) | -30 ~ +75 °C |
| Forward voltage drop (VF, IF=20 mA) | 1.25‑1.5 V |
| Reverse current (IR, VR=3 V) | 10 bA |
| Collector dark current (ICEO, Vce=20 V) | 1 bA |
| Saturation voltage (Vce, IF=8 mA, Ic=0.15 mA) | 0.4 V |
| Response time (Tf) | 1000 µs |
The detection distance is 2‑10 mm.
The sensor can handle a forward current of up to 50 mA.
It operates from –20 °C to +65 °C.