This document describes the features and characteristics of the Single Beam Infrared Photodetector Tl05998625261. The sensor is composed of high power infrared LED and high sensitivity phototransistor. It has a dust-proof design with a light gap width of 0.5mm and a light axis center of 2.9mm. It includes various specifications and parameters.
The TL0599 is a single‑beam direct‑style infrared photoelectric sensor that uses a high‑power infrared diode and a high‑sensitivity phototransistor. It features a dust‑proof design, a 0.5 mm light slit, and an optical axis center offset of 2.9 mm.
The document lists the sensor's electrical limits, optical performance data, and mechanical dimensions, including forward current, reverse voltage, power dissipation, temperature ranges, and response times. This manual is written in Chinese.
| Forward current (IF) | 50 mA |
|---|---|
| Reverse voltage (VR) | 5 V |
| Input dissipation power (P) | 75 mW |
| Collector‑Emitter voltage (Vceo) | 30 V |
| Collector‑Base voltage (Veco) | 5 V |
| Operating temperature (Topr) | -40 °C to +70 °C |
| Storage temperature (Tstg) | -40 °C to +85 °C |
| Light slit width | 0.5 mm |
| Optical axis center offset | 2.9 mm |
The forward current (IF) is rated at 50 mA.
The sensor operates from –40 °C to +70 °C.
The light slit width is 0.5 mm.
The optical axis center is offset by 2.9 mm.