The Infineon IPD75N04S4-06 OptiMOS®-T2 Power Transistor data sheet provides specifications, ratings, and electrical characteristics for the N‑channel device.
The IPD75N04S4-06 OptiMOS®-T2 is an N‑channel enhancement‑mode power transistor featuring AEC qualification, RoHS compliance, and a high operating temperature up to 175 °C. It is supplied in a PG‑TO252‑3‑313 package and is designed for high‑current applications.
The data sheet lists maximum ratings such as a continuous drain current of 75 A, a gate‑source voltage of ±20 V, and a power dissipation of 58 W. Detailed electrical, thermal, and dynamic characteristics are provided, including on‑state resistance (RDS(on) up to 5.9 mΩ) and avalanche energy of 72 mJ.
| Gate‑source voltage (VGS) | ±20 V |
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The transistor is rated for a gate‑source voltage of ±20 V.