G3S06004J 600V/4A silicon carbide Schottky power diode

G3S06004J 600V/4A silicon carbide Schottky power diode features: positive temperature coefficient, easy to parallel; unaffected switching characteristics with temperature; maximum working temperature 175 ℃; zero reverse recovery current; zero forward recovery voltage. Product advantages: single pole device; greatly reduce switching loss; no thermal breakdown in parallel devices; reduce the system's dependence on heat sink. Application fields: switch mode power supply (SMPS), power factor correction (PFC); motor drive, photovoltaic inverter, uninterruptible power supply, wind turbine, train traction system, electric vehicle.

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Published
30 October, 2023
Updated
30 October, 2023
MD5 checksum
CD5925F0EF078CA307856C44BCD0FD80
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G3S06004J 600V/4A silicon carbide Schottky power diode PDF
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