EG2131 chip data sheet V1.0 is a power MOS tube, IGBT tube gate driver dedicated chip data sheet released by Yijing Microelectronic Co., Ltd., which mainly introduces the characteristics, description, application field, pin, structure framework, typical application circuit, electrical characteristics, application design, package size and other information of the chip.
This datasheet describes the EG2131 high‑power MOS/IGBT gate‑driver chip, including its internal logic, dead‑time control, under‑voltage lockout, and bootstrap power‑supply design. It lists key features such as a 300 V rating, 5 V/3.3 V compatible inputs, and up to ±1 A/±1.5 A output current.
The document contains sections on pin definitions, electrical characteristics, limit parameters, switching‑time and dead‑time graphs, typical application circuits, internal block diagram, and package dimensions for the SOP‑8 form factor. This manual is written in Chinese.
| Maximum high‑side voltage (V_B) | 300 V |
|---|---|
| Static power consumption | < 100 µA |
| Operating temperature range (TA) | -45 °C – 125 °C |
Yes, the chip has built‑in dead‑time control circuitry.
The EG2131 provides a lock‑out function that ensures the high‑ and low‑side devices never turn on at the same time.
The bootstrap high‑side supply can tolerate up to 300 V.