This document describes a power MOSFET product with dynamic dV/dt rating, repetitive avalanche rating, isolated central mounting hole, 175°C operating temperature, fast switching, ease of paralleling, and simple drive requirements. It is compliant with RoHS Directive 2002/95/EC.
The document describes third-generation Power MOSFETs from Vishay Siliconix designed for commercial-industrial applications. These devices offer a combination of fast switching, ruggedized design, low on-resistance, and cost-effectiveness. The preferred package is the TO-247AC, which features an isolated central mounting hole and greater creepage distances compared to earlier packages like TO-218.
The datasheet provides comprehensive technical data including absolute maximum ratings, thermal resistance values, electrical specifications such as drain-source breakdown voltage and on-state resistance, and typical characteristics graphs. It also includes package information for the TO-247AC case with specific dimensional drawings.
| Drain-Source Voltage (VDS) | 100 V |
|---|---|
| Maximum Power Dissipation (PD) at TC = 25 °C | 230 W |
| Operating Junction and Storage Temperature Range | -55 to +175 °C |
| Package Type | TO-247AC |
The maximum operating and storage temperature range is -55 to +175 °C.
Yes, the product is listed as RoHS Compliant in the ordering information.