This document describes the M40SZ100Y and M40SZ100W NVRAM supervisors, which can convert low power SRAMs into NVRAMs. They support 5V or 3V operating voltage and feature precision power monitoring and power switching circuitry. Automatic write-protection is enabled when VCC is out-of-tolerance. Different supply voltages and power-fail deselect voltages are available for each model.
The M40SZ100Y and M40SZ100W are self-contained NVRAM controller devices designed to convert standard low-power SRAMs into non-volatile memory. They utilize a precision voltage reference and comparator to monitor the Vcc input for out-of-tolerance conditions, automatically writing-protecting stored data when the supply voltage is invalid. During a power failure, the device switches the SRAM from the Vcc pin to a lithium cell within a SNAPHAT housing (or an external battery for the 16-lead package) to maintain data retention.
| Operating voltage (M40SZ100Y) | 4.5 to 5.5 V |
|---|---|
| Operating voltage (M40SZ100W) | 2.7 to 3.6 V |
| Power-fail deselect voltage (M40SZ100Y) | 4.20 V to 4.50 V |
| Power-fail deselect voltage (M40SZ100W) | 2.55 V to 2.70 V |
| Chip enable access propagation delay | Less than 10 ns |
| Reference voltage for PFI/PFO | 1.25 V |
They are self-contained devices that convert standard low-power SRAMs into non-volatile memory.
It switches the SRAM from the Vcc pin to a lithium cell within a SNAPHAT housing or an external battery to provide energy for data retention.
The conditioned chip enable output is forced inactive to write-protect the stored data in the SRAM.