This document is the datasheet of SMA540B, which introduces the features and characteristics of the product.
The SMA540B is an NPN transistor that integrates a current mirror for biasing, allowing the collector current to be controlled by an external resistor at the Bias pin. It is designed for wideband applications such as cellular/cordless telephones and high-frequency oscillators. The device features an open collector output and is housed in an ultra-miniature SOT323-4L (SC70) lead-free package.
| Maximum stable gain (Gms) | 19 dB at 1.8 GHz |
|---|---|
| Typical supply voltage | 1.4-3.3 V |
| Transition frequency | 42 GHz |
| Collector emitter voltage | 4.5 V |
| Collector current | 40 mA |
| Operating temperature | -40 to +85 °C |
| Package dimensions | 1.15mm x 1.8mm x 0.8mm |
The collector current is controlled by setting the current at the Bias pin according to the formula IC = 10 * IBIAS.
The typical supply voltage range is 1.4 to 3.3 V.