STEVAL-TDR007V1 is a 200 W RF power amplifier intended for IFF-1030 MHz interrogator using PD57002-E + PD57018-E + 2 x PD57060-E N-channel lateral MOS field-effect transistors.
The STEVAL-TDR007V1 is a 3-stage RF power amplifier demonstration board designed for IFF-1030 MHz interrogators. It utilizes N-channel enhancement-mode lateral MOSFETs (PD57002-E, PD57018-E, and 2 x PD57060-E) and is designed in cooperation with ETSA in France. The board is RoHS compliant and intended for applications requiring a supply voltage of 36 V.
| Frequency | 1030 MHz |
|---|---|
| Supply voltage | 36 V |
| Peak power | 200 W typical |
| Input power | 23 dBm |
| Harmonics | < -45 dBc |
| Rise and fall time | < 100 ns |
| Operating case temperature | +80 °C |
| Max. ambient temperature | -10 to +50 °C |
The peak power is 200 W typical.
The board operates at a frequency of 1030 MHz.
Yes, the document states it is RoHS compliant.