This document describes the features and characteristics of a 650V power Schottky silicon carbide diode called STPSC6H065. The diode is manufactured using a silicon carbide substrate and has a wide bandgap material, allowing for the design of a Schottky diode structure with a 650V rating. Due to the Schottky construction, there is no recovery at turn-off and negligible ringing patterns. The minimal capacitive turn-off behavior is independent of temperature. This diode is especially suited for use in PFC applications and provides improved performance in hard switching conditions. Its high forward surge capability ensures greater margin during transient phases.
The STPSC6H065 is a 650 V power Schottky silicon carbide (SiC) diode designed for high-performance applications, particularly Power Factor Correction (PFC). Utilizing a silicon carbide substrate, this device offers negligible reverse recovery and switching behavior that is independent of temperature. Its minimal capacitive turn-off behavior ensures reliable performance in hard switching conditions.
| Repetitive peak reverse voltage | 650 V |
|---|---|
| Forward rms current (TO-220AC) | 21 A |
| Operating junction temperature | -40 to +175 °C |
The device features no or negligible reverse recovery, switching behavior independent of temperature, and is dedicated to PFC applications.
The maximum operating junction temperature is +175 °C.
The device is available in TO-220AC, D2PAK, and DPAK packages.