This document describes the features and characteristics of a 650V power Schottky silicon carbide diode called STPSC6H065. The diode is manufactured using a silicon carbide substrate and has a wide bandgap material, allowing for the design of a Schottky diode structure with a 650V rating. Due to the Schottky construction, there is no recovery at turn-off and negligible ringing patterns. The minimal capacitive turn-off behavior is independent of temperature. This diode is especially suited for use in PFC applications and provides improved performance in hard switching conditions. Its high forward surge capability ensures greater margin during transient phases.