STTH2R06 is a high efficiency ultrafast diode from ST. It features very low conduction losses, negligible switching losses, low forward and reverse recovery times, and high junction temperature. It is specially suited for switching mode base drive and transistor circuits. Packaged in axial, SMA, SMB and SMC, this device is intended for use in high frequency inverters, free wheeling and polarity protection.
This document provides technical specifications for the STTH2R06 high efficiency ultrafast diode, which utilizes ST Turbo 2 600 V planar Pt doping technology. The device is designed for use in high frequency inverters, free wheeling, and polarity protection applications.
| Repetitive peak reverse voltage | 600 V |
|---|---|
| Forward rms current | 7 A |
| Average forward current | 2 A |
| Operating junction temperature range | -40 to +175 °C |
| Reverse leakage current | 2 uA |
| Reverse recovery time (typ) | 35 ns |
The device is rated for a repetitive peak reverse voltage of 600 V.
The operating junction temperature range is from -40 to +175 °C.