This is a bipolar power transistor product from Motorola, designed for general-purpose amplifier and low-speed switching applications. It has a high DC current gain—hFE=2500 (Typ) @ IC=1.0 Adc; a low collector-emitter saturation voltage—VCE(sat)=2.5 Vdc (Max) @ IC=2.0 Adc; and a monolithic construction with built-in base-emitter shunt resistors. It is packaged in a TO-220AB compact package.
This document provides technical data for the Motorola TIP110, TIP111, TIP112, TIP115, TIP116, and TIP117 series of plastic medium-power complementary silicon transistors. These devices are designed for general-purpose amplifier and low-speed switching applications, featuring high DC current gain and a monolithic construction with built-in base-emitter shunt resistors. The transistors are available in a TO-220AB compact package.
| Collector-Emitter Sustaining Voltage (TIP110, TIP115) | 60 Vdc (Min) |
|---|---|
| Collector-Emitter Sustaining Voltage (TIP111, TIP116) | 80 Vdc (Min) |
| Collector-Emitter Sustaining Voltage (TIP112, TIP117) | 100 Vdc (Min) |
| Collector Current (Continuous) | 2.0 Adc |
| Total Power Dissipation (Tg = 25°C) | 50 Watts |
| Operating and Storage Junction Temperature Range | -65 to +150 °C |
| Thermal Resistance, Junction to Case | 25 °C/W |
These devices are designed for use in general-purpose amplifiers and low-speed switching circuits.
The maximum continuous collector current is rated at 2.0 Amperes.