The 74V1G03 is an advanced high-speed CMOS SINGLE 2-INPUT OPEN DRAIN NAND GATE fabricated with sub-micron silicon gate double-layer metal wiring C2MOS technology. The internal circuit is composed of 3 stages including buffer output, which provide high noise immunity and stable output. This device can, with an external pull-up resistor, be used in wired AND configuration. This device can also be used as a led driver in any other application requiring a current sink. Power down protection is provided on all inputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V.
This document is a preliminary data sheet for the 74V1G03, an advanced high-speed CMOS single 2-input open drain NAND gate fabricated with sub-micron silicon gate and double-layer metal wiring technology. The device features high noise immunity, low power dissipation, and improved latch-up immunity.
| Operating Voltage Range | 2V to 5.5V |
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The device operates with a supply voltage between 2.0 V and 5.5 V.
The maximum quiescent supply current is 20 µA when the voltage is 5.5 V.
The minimum high level input voltage is 0.7V CC and the minimum low level input voltage is 0.3V CC.