RB521S30 is a Schottky barrier diode with features of low forward voltage drop, ultra-thin package, and moisture resistance.
This datasheet provides design specifications for the Fairchild Semiconductor RB521S30 Schottky Barrier Diode. Key features include a low forward voltage drop, a flat lead surface mount device under 0.70mm height, and an extremely small outline plastic SOD-523F package.
| Maximum Repetitive Reverse Voltage | 30 V |
|---|---|
| Average Rectified Forward Current | 200 mA |
| Operating Junction Temperature Range | -55 to +125 °C |
| Total Device Dissipation (Tc=25°C) | 200 mW |
| Thermal Resistance, Junction to Ambient | 500 °C/W |
| Breakdown Voltage | 30 V |
| Reverse Leakage Current (Vr=10V) | 30 µA |
| Forward Voltage (If=200mA) | 0.5 V |
The device has a maximum repetitive reverse voltage of 30 V.
The operating junction temperature ranges from -55 to +125 °C.