edi ELECTRONIC DEVICES FAST RECOVERY 200 NANOSECOND SILICON RECTIFIER handbook

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edi ELECTRONIC DEVICES FAST RECOVERY 200 NANOSECOND SILICON RECTIFIER handbook - cover page
Brand
edi
Category
RECTIFIER
Document type
Datasheet
Language
English
Pages
2
File format
PDF
File size
57 KB
Published
01 August, 2012
Updated
30 September, 2023
MD5 checksum
4D860E258FA0B571A8DE385E1AEEA842
PDF
edi ELECTRONIC DEVICES FAST RECOVERY 200 NANOSECOND SILICON RECTIFIER handbook PDF

About this manual

This document is a datasheet for the Electronic Devices PRV series of fast recovery silicon rectifiers. Key features highlighted include a small size, low leakage, high temperature stability, and high surge capability. The devices are designed for applications requiring a maximum reverse recovery time of 200 nanoseconds.

What's inside

  • Fast Recovery Silicon Rectifier
  • Electrical Characteristics
  • Maximum Reverse Recovery Time
  • Average Rectified Forward Current
  • Peak Surge Current
  • Forward Voltage Drop
  • Reverse Current
  • Operating Temperature Range
  • Storage Temperature Range
  • Typical Reverse Recovery Waveform

Specifications

Maximum Reverse Recovery Time200 Nanoseconds
Max. Forward Voltage Drop1.4 Volts

Frequently asked questions

What is the maximum reverse recovery time for the PRV series?

The maximum reverse recovery time is 200 nanoseconds.

What is the maximum forward voltage drop at 1 Amp?

The maximum forward voltage drop is 1.4 Volts at 1 Amp.

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