This document describes the features and characteristics of the FQP16N25C/FQPF16N25C N-Channel enhancement mode power field effect transistors, which are produced using Fairchild's proprietary planar stripe DMOS technology. These devices have low on-state resistance, superior switching performance, and the ability to withstand high energy pulses in avalanche and commutation modes. They are well suited for high efficiency switching DC/DC converters, switch mode power supplies, uninterruptible power supplies, and motor controls.
This document provides technical specifications for the Fairchild Semiconductor FQP16N25C and FQPF16N25C N-Channel enhancement mode power field effect transistors. These devices utilize proprietary planar stripe, DMOS technology to minimize on-state resistance and provide superior switching performance for high efficiency switching DC/DC converters and motor controls. The datasheet includes absolute maximum ratings, electrical characteristics, and typical performance graphs.
| Drain-Source Voltage | 250 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | 15.6 A |
| Gate-Source Voltage | +30 V |
| Single Pulsed Avalanche Energy | 410 mJ |
| Power Dissipation (Tc = 25°C) | 139 W |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction-to-Case | 0.9 °C/W |
| Package Type | TO-220 / TO-220F |
These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies, and motor controls.