This data sheet is for N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET 2N7000P
This document is a datasheet for the 2N7000P N-Channel DMOS FET, issued in March 1994. It provides absolute maximum ratings and electrical characteristics for the device.
The device is compatible with TO92 packages and features a 60V drain-source voltage rating. Key specifications include a continuous drain current of 200 mA and a power dissipation of 400 mW at 25°C.
| Drain-Source Voltage | 60 V |
|---|---|
| Continuous Drain Current | 200 mA |
| Power Dissipation | 400 mW |
| Operating Temperature Range | -55 to +150 °C |
| Threshold Voltage | 0.8 to 3 V |
| Package Type | TO92 Compatible |
The maximum drain-source voltage is 60 V.
The continuous drain current is 200 mA at 25°C.