The S-MOS SSC5000 series is a family of high-performance standard cell circuits manufactured on a 0.8 micron double-metal N-well CMOS process. The series features gate delays of 300 picoseconds and offers various output driver types, including single outputs up to 24mA and parallel outputs up to 48mA. It is designed for high pin count applications with a low gate-to-pads ratio and supports optional tight pitch I/O for TAB assembly technology.
| Process Technology | 0.8 micron (drawn) channel length N-well double metal CMOS |
|---|---|
| Typical Gate Delay | 300 picoseconds |
| Single Output Driver Current | 24mA |
| Parallel Output Driver Current | 48mA |
| RAM Block Size | 128x8 bits to 8Kx32 bits |
| Power Supply Voltage (Typical) | 5.0V |
The typical gate delay is 300 picoseconds for NAND gates with FO=2 and 2mm AL.
High-speed and silicon-efficient RAM blocks are available in sizes ranging from 128x8 bits to 8Kx32 bits.
The absolute maximum rating for the power supply voltage is 7.0V.