Eorex EM6132K800W 32Kx8 Low Power SRAM Datasheet

The EM6132K800W is a low power SRAM in the EM6132K series with a capacity of 32K bytes and a data width of 8 bits. It operates at a voltage range of 2.7V to 5.5V and consumes 20mA (typical) of operating current and 1µA (typical) of standby current.


Eorex EM6132K800W 32Kx8 Low Power SRAM Datasheet - cover page
Brand
eorex
Category
Memory
Document type
Datasheet
Language
English
Pages
12
File format
PDF
File size
333 KB
Published
11 June, 2012
Updated
30 September, 2023
MD5 checksum
BB6754B755139CEB7074B64EBB172EE8

About this manual

The Eorex EM6132K800W is a 262,144-bit low power CMOS static random access memory organized as 32,768 words by 8 bits. It is fabricated using high performance, high reliability CMOS technology and is well suited for low power applications, particularly battery back-up nonvolatile memory applications. The device operates from a single power supply of 2.7V to 5.5V, and all inputs and outputs are fully TTL compatible.

What's inside

  • General Description
  • Features
  • Functional Block Diagram
  • Pin Description
  • Pin Configuration
  • Absolute Maximum Ratings
  • DC Electrical Characteristics
  • AC Electrical Characteristics
  • Timing Waveforms
  • Data Retention Characteristics

Specifications

Memory Organization32,768 words by 8 bits
Supply Voltage2.7V ~ 5.5V
Operating Temperature-40 to 85°C
Access Time35/55/70ns
Operating Current (Typ.)20/15/10mA @ 2.7~3.6V
Standby Current (-L version)1µA @ 2.7~3.6V
Package Types28-pin PDIP, SOP, STSOP
Input/Output CompatibilityTTL compatible

Frequently asked questions

What is the typical operating current at 3.3V?

The typical operating current is 20mA at 2.7V to 3.6V.

Is the device suitable for battery backup applications?

Yes, it is particularly well suited for battery back-up nonvolatile memory applications.

What is the minimum data retention voltage?

The minimum data retention voltage is 2.0V.

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