V53C8125H is a 128K x 8-bit CMOS dynamic random access memory with features such as Fast Page Mode, high data bandwidth, fast usable speed and CMOS standby current. All inputs and outputs are TTL compatible. Input and output capacitances are significantly lowered to allow increased system performance. Fast Page Mode operation allows random access of up to 512 columns (x9) bits within a row with cycle times as short as 19 ns. Due to static circuitry, the CAS clock is not in the critical timing path. The flow-through column address latches allow address pipelining while relaxing many critical system timing requirements for fast usable speed. These features make the V53C8125H an ideal choice for high-performance, reliable and low-power applications.
The MOSL V53C8125H is an ultra-high performance 128K x 8-bit CMOS Dynamic Random Access Memory (DRAM). It is designed for high-speed applications such as graphics, digital signal processing, and high-performance peripherals. The device supports a maximum sustained data rate of up to 53 MHz via Fast Page Mode operation.
| Organization | 128K x 8-bit |
|---|---|
| Max. RAS Access Time | 30, 35, 40, 45, 50 ns |
| Min. Fast Page Mode Cycle Time | 19 to 28 ns |
| Max. Sustained Data Rate | up to 53 MHz |
| Refresh Interval | 256 cycles/8 ms |
| Operating Temperature Range | 0 ° C to 70 ° C |
| Supply Voltage (V CC) | 4.5 V to 5.5 V |
The device is available with RAS access times of 30, 35, 40, 45, and 50 ns.
The device is available in 26/24 pin SOJ and 28 pin TSOP-I packages.
Yes, it supports Fast Page Mode which allows random access of up to 512 columns with cycle times as short as 19 ns.