This document provides technical specifications for the Topaz Semiconductor SD1100 and SD1101 series of N-channel enhancement-mode high-voltage D-MOS power FETs. The devices feature a gate stand-off voltage of at least 40V and are offered in TO-226AA (TO-92), TO-206AA (TO-18), and TO-205AF (TO-39) packages.
| Drain-Source Voltage | 450V (SD1100), 400V (SD1101) |
|---|---|
| Gate Stand-off Voltage | 40V min. |
| Continuous Drain Current (TO-92) | 1A @ +100°C |
| Operating Junction Temperature Range | -85°C to +150°C |
These devices are suitable for motor controls, line drivers, and power supplies.
The operating range is from -85°C to +150°C.