TC4007UBP/UBF CMOS Digital Integrated Circuit Datasheet

TC4007UBP/UBF CMOS Digital Integrated Circuit Datasheet - cover page
Brand
TC4007UBP/BUF
Category
INTEGRATED CIRCUITS
Document type
Datasheet
Language
English
Pages
4
File format
PDF
File size
166 KB
Published
07 June, 2012
Updated
27 July, 2012
MD5 checksum
C738D8E495CDC1595FB41CF85E1BB09D
PDF
TC4007UBP/UBF CMOS Digital Integrated Circuit Datasheet PDF

About this manual

This document is a technical datasheet for the TC4007UBP/TC4007UBF CMOS digital integrated circuit. The device contains three P-channel and three N-channel enhancement type MOS FET elements configured to function as an inverter, source output, and drain output.

What's inside

  • Maximum Ratings
  • Logic Diagram
  • Pin Assignment
  • Recommended Operating Conditions
  • Static Electrical Characteristics
  • Dynamic Electrical Characteristics
  • Typical Application

Specifications

DC Supply Voltage-0.5 to 20 V
Input Voltage-0.5 to +0.5 V beyond supply rails
Power Dissipation (DIP)300 mW
Operating Ambient Temperature-40 to +85 C
DC Supply Voltage (Recommended)3 - 18 V

Frequently asked questions

What are the typical applications for this IC?

The device can be used in inverter, waveform shaping circuits, NAND/NOR gates, linear amplifiers, clocked gates, transmission gates, and high fan-out buffers.

What are the maximum DC supply voltage ratings for this integrated circuit?

The device can handle a DC supply voltage ranging from -0.5V to +20V.

What is the maximum power dissipation for this chip in DIP and MFP packages?

The maximum power dissipation is 300 mW for DIP packages and 180 mW for MFP packages.

What are the minimum and maximum operating ambient temperature limits?

The circuit operates within an ambient temperature range of -40°C to +85°C.

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