This document describes the features and characteristics of SEMITOP® 3, including symbol units and rectifier characteristics.
The document is a technical data sheet for the SEMIKRON SK 10 BGD 065 ET semiconductor device. It describes a compact design featuring one-screw mounting with heat transfer and isolation capabilities.
The datasheet provides absolute maximum ratings, electrical characteristics, and mechanical data for the integrated IGBT inverter, diode inverter, rectifier, and temperature sensor.
| Product Type | 1-phase bridge rectifier + 3-phase bridge inverter |
|---|---|
| IGBT Collector-Emitter Voltage (Vces) | 600 V |
| IGBT Continuous Current (Io) | 17 A @ Tj=25°C; 11 A @ Tj=80°C |
| IGBT Peak Pulse Current (Iom) | 20 A |
| Operating Temperature Range (Tj) | -40... +150 °C |
| Mounting Torque | 2.5 Nm |
The junction temperature range is from -40 to +150 °C.
Yes, it is an electrostatic discharge sensitive device (ESDS) according to IEC 60747-1.