This document describes the features and characteristics of the IXYS TO-247 AD power MOSFET product, including maximum ratings, pin definitions, maximum temperature, voltage, and current. The product features low RDS(on), rugged structure, avalanche rating, and low package inductance, making it suitable for high side switching, push-pull amplifiers, DC choppers, and automatic test equipment.
This document provides technical information for the IXTH 10P60, a standard power MOSFET featuring an avalanche rating and low Rds(on) via HDMOS process. It is designed as a P-channel enhancement mode device suitable for high-side switching, push-pull amplifiers, DC choppers, and automatic test equipment.
| Drain-Source Voltage (Vdss) | -600 V |
|---|---|
| Continuous Drain Current (Idss) | -10 A |
| Package Type | TO-247 AD |
| Operating Temperature Range | -55 ... +150 °C |
You must apply a mounting torque between 1.13 and 1.1 Nm per inch of thread pitch.