Hyundai Semiconductor HY514400B 1Mx4 Fast Page Mode DRAM Datasheet

This document describes the functions and features of the HY514400B product, including power supply, address input, data input/output, etc. The HY514400B is a 1Mx4,FP DRAM.


Hyundai Semiconductor HY514400B 1Mx4 Fast Page Mode DRAM Datasheet - cover page
Brand
HUUNDAI
Category
Memory
Document type
Datasheet
Language
English
Pages
8
File format
PDF
File size
80 KB
Published
06 June, 2012
Updated
28 September, 2023
MD5 checksum
396103DC6BC153E59EB9205CAA0DB981

About this manual

This document describes the HY514400B family of 4M-bit dynamic RAMs organized in a 1,048,576 x 4-bit configuration. The device features Extended Data Out (EDO) mode for improved read operations, TTL compatible inputs and outputs, and JEDEC standard pinout.

The datasheet provides detailed specifications including absolute maximum ratings, recommended DC operating conditions, AC timing characteristics for various access speeds (50ns, 60ns, 70ns), and capacitance values. It covers different package types such as SOJ and TSOP-II.

What's inside

  • Description
  • Features
  • Ordering Information
  • Functional Block Diagram
  • Pin Configuration
  • Absolute Maximum Ratings
  • DC Operating Characteristics
  • AC Characteristics
  • Capacitance
  • Notes

Specifications

Capacity4M bit (1,048,576 x 4-bit)
Organization1Mx4
Storage Temperature Range-55 to 150 °C

Frequently asked questions

What is the organization of the HY514400B DRAM?

The device is organized as a 1,048,576 x 4-bit configuration.

Does the HY514400B support Fast Page Mode?

Yes, it supports Fast Page Mode operation.

Is the HY514400B TTL compatible?

Yes, it has TTL compatible inputs and outputs.

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