The document provides information on the features and characteristics of a product, including IC-VCE characteristics, hFE-IC characteristics, hFE-IC temperature characteristics, VCE(sat)-IC temperature characteristics, VCE(sat)-IB characteristics, IC-VBE temperature characteristics, θ j-a-PW characteristics, PT-Ta characteristics, and Safe Operating Area (SOA).
The document presents typical characteristic curves for the SMA4020 PNP Darlington transistor. These include IC-VCE, hFE-IC, temperature characteristics (hFE-IC Temperature Characteristics, VCE(sat)-IC, and VCE(sat)-IB), and I C-VBE relationships.
| Collector-Base Breakdown Voltage (VCBO) | -60 V |
|---|---|
| Collector-Emitter Breakdown Voltage (VCEO) | -60 V |
| Emitter-Base Breakdown Voltage (VEBO) | -6 V |
| Junction Temperature (Tj) | 150 °C |
| Storage Temperature (Tstg) | -40 to +150 °C |
| Collector Cutoff Current (ICBO) | -10 µA |
| Emitter Cutoff Current (IEBO) | -10 mA |
| DC Current Gain (hFE) min | 2000 |
| Collector-Emitter Saturation Voltage (VCE(sat)) max | -1.5 V |
The maximum junction temperature (Tj) is 150 °C.
The absolute maximum rating for collector current (IC) is -4 A, and for base current (IB) is -1 A.
The typical hFE is 2000 under these conditions.