This document provides technical specifications for the Rohm 2SC3910, a silicon NPN triple-diffused junction mesa type high-speed switching transistor. It outlines package dimensions and key features such as high collector-base voltage and wide safety operation areas.
The datasheet lists absolute maximum ratings including collector-base voltage of 800V and top temperature limits of +150°C. Electrical characteristics cover parameters like current gain, transition frequency (fT), and switching times under specific test conditions.
| Transistor Type | Silicon NPN Triple-Diffused Junction Mesa Type |
|---|---|
| Collector-base voltage (Vceo) | 800 V |
| Top Temperature | +150°C |
The absolute maximum rating for the collector-base voltage (Vceo) is 800 V.
The device operates within a top temperature range of -55°C to +150°C.