This document is a technical datasheet for the FUJI 2SK1006-01MR, an N-channel silicon power MOS-FET. Key features highlighted include high-speed switching capabilities, low on-resistance, avalanche-proof construction, and suitability for applications such as switching regulators, UPS systems, and DC-DC converters.
The datasheet provides absolute maximum ratings, electrical characteristics at 25°C, typical output and transfer characteristics graphs, thermal resistance data, and safe operating area diagrams. It also includes outline drawings showing the EIAJ SC-67 package with pin definitions for Gate, Drain, and Source.
The maximum continuous drain current is rated at 5 A.
The maximum power dissipation is 40 W.