Update: 30 September, 2023
The EM6112K800V is a low power CMOS static random access memory from Toshiba with a capacity of 4,194,304 bits, organized as 524,288 words x 8 bits. It is fabricated using high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The EM6112K800V is well designed for low power applications, and particularly well suited for battery back-up nonvolatile memory applications. The EM6112K800V operates from a single power supply of 2.7V~3.6V and all inputs and outputs are fully TTL compatible.
File format: PDF
Size: -
MD5 Checksum: 6329CD7D51DC6066141DC72E9E05BF91
Publication date: 05 June, 2012
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PDF Link: eorx 512Kx8 LP SRAM EM6112K800V Series PDF