The EM6112K800V is a low power CMOS static random access memory from Toshiba with a capacity of 4,194,304 bits, organized as 524,288 words x 8 bits. It is fabricated using high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The EM6112K800V is well designed for low power applications, and particularly well suited for battery back-up nonvolatile memory applications. The EM6112K800V operates from a single power supply of 2.7V~3.6V and all inputs and outputs are fully TTL compatible.
The EM6112K800V is a 4.194.304‑bit low‑power CMOS static random access memory organized as 524 288 words by 8 bits. It is designed for low‑power and battery‑back‑up applications and operates from a single 2.7 V‑3.6 V supply.
Key specifications include fast access times of 45 ns to 70 ns, standby power around 0.5 mA, and a variety of packages such as 32‑pin TSOP and 36‑ball TFBGA. The device supports a wide temperature range and provides detailed timing characteristics for read and write cycles.
| Memory size | 4.194.304‑bit |
|---|---|
| Organization | 524 288 words × 8 bits |
| Supply voltage | 2.7 V – 3.6 V |
| Access time | 45 ns – 70 ns |
| Standby power | 0.5 mA |
| Power dissipation | 1 W |
| Operating temperature | -20 °C to 80 °C |
| Package options | 32‑pin TSOP, 36‑ball TFBGA |
| Read cycle time | 45 ns – 70 ns |
| Write cycle time | 45 ns – 70 ns |
It operates from a single power supply of 2.7 V to 3.6 V.
The device provides fast access times ranging from 45 ns to 70 ns.
It is offered in 32‑pin 8 mm × 20 mm TSOP and 36‑ball 6 mm × 8 mm TFBGA packages.
Standby power consumption is about 0.5 mA.