The EM39LV088 is an 8M bits Flash memory organized as 1M x 8 bits. It uses a 2.7-3.6V power supply and features high performance Flash memory technology with a typical Byte-Program time of 14 µsec and a typical Sector/Block-Erase time of 18 ms. It has on-chip hardware and software data protection schemes, offering endurance of 100,000 cycles and data retention of over 10 years.
The EM39LV088 flash memory provides 8 Mbits organized as 1 M × 8 bits and operates from a single 2.7‑3.6 V supply. It features high‑performance programming with a typical byte‑program time of 14 µs and sector/block erase times of 18 ms. The device includes both hardware and software data‑protection schemes, offers 100 k cycles endurance, and retains data for more than 10 years.
The part is available in a 48‑pin TSOP package (and as known‑good dice) with uniform 4 KB sectors and 64 KB blocks. Electrical specifications include 15 mA active current, 2 µA standby current, 70‑90 ns read access time, and operation from –55 °C to 125 °C. Detailed pin assignments, command sequences, and timing diagrams are provided throughout the document.
| Memory capacity | 8 Mbits (1 M × 8) |
|---|---|
| Supply voltage | 2.7 V – 3.6 V |
| Typical byte‑program time | 14 µs |
| Typical sector/block erase time | 18 ms |
| Endurance cycles | 100 000 cycles |
| Data retention | >10 years |
| Package type | 48‑pin TSOP |
| Sector size | 4 KB |
| Block size | 64 KB |
| Active current (typical) | 15 mA |
| Standby current (typical) | 2 µA |
| Read access time | 70 ns – 90 ns |
| Operating temperature | -55 °C to 125 °C |
| Storage temperature | -65 °C to 150 °C |
It operates from a single 2.7 V to 3.6 V power supply.
The typical byte‑program time is 14 µs.
It is rated for about 100 000 program/erase cycles.
The device is offered in a 48‑pin TSOP package and as known‑good dice (KGD).