This document introduces the features of the STM32F042K6T6 MCU, including 5V read, program, and erase, high performance, low power consumption, compatibility with JEDEC standards, sector erase architecture, erase suspend/resume, sector protection, temporary sector unprotect, internal erase algorithm, internal programming algorithm, fast programming and erase times
The HY29F400A is a 4 Megabit, 5 V‑only CMOS flash memory offered in 44‑pin PSOP and 48‑pin TSOP packages. It supports in‑system programming and erasing with a single 5 V supply and provides fast access times suitable for high‑speed microprocessors.
The document describes key features, pin configurations, signal descriptions, memory organization, bus operations, sector protection, and timing specifications, along with warranty and legal notices.
| Capacity | 4 Megabit (512K×8/256K×16) |
|---|---|
| Operating Voltage | 5 V (single‑supply) |
| Read Access Time | 50 ns (typical) |
| Program/Erase Current | 30 mA typical program/erase |
| Standby Current | 5 µA maximum |
| Program/Erase Cycles | 100,000 minimum |
| Package Options | 44‑pin PSOP, 48‑pin TSOP, reverse TSOP |
| Byte Programming Time | 7 µs typical |
| Sector Erase Time | 1.0 s typical |
| Chip Erase Time | 11 s typical |
The device operates from a single 5 V supply.
It is rated for a minimum of 100,000 program/erase cycles.
It is offered in 44‑pin PSOP, 48‑pin TSOP, and reverse TSOP packages.
Typical sector erase time is 1.0 second.