This document describes a digital CMOS memory microcircuit product with a storage capacity of 128K x 8 bits EEPROM, using monolithic silicon technology. The product has multiple versions and suppliers, supporting different package types and data retention times. The document provides modification and update records for each version.
The document defines the scope, part‑identifying number (PIN) format, and available device classes for the 5962‑38267 EEPROM. It lists the case outlines, lead finishes, and radiation‑hardness assurance levels applicable to each part number.
Key specifications such as supply voltage range, operating temperature, data retention, endurance, and electrical performance are detailed in tables. Quality‑assurance provisions, testing methods, and certification requirements are also described for the various device classes (Q, V, and M).
| Memory size | 128K × 8 bits |
|---|---|
| Operating temperature range | -55 °C to +125 °C |
| Endurance (write/erase cycles) | 10,000 cycles/byte (minimum) |
It is rated for at least 10,000 write/erase cycles per byte.
The EEPROM can operate from –55 °C to +125 °C.