SH8K32 is a N-channel MOSFET with a built-in G-S Protection Diode. It is suitable for switching applications.
The SH8K32 is a 4 V drive N‑channel MOSFET offered in a small SOP‑8 surface‑mount package. It includes a built‑in gate‑source protection diode and is designed for switching applications. Key features include high current capability, low on‑resistance, and ESD protection.
The datasheet lists absolute maximum ratings, typical electrical parameters, and recommended application circuits. It also provides packaging information and legal notices. The device is intended for general‑purpose electronic equipment such as audio‑visual, office automation, and communication devices, but not for safety‑critical or radiation‑tolerant applications.
| Drain‑source voltage (Vds) | 60 V |
|---|---|
| Gate‑source voltage (Vgs) | +20 V |
| Pulsed drain current (Id,pulse) | 418 A |
| Continuous source current (Is) | 1.0 A |
| Body diode pulsed current (Isp) | 18 A |
| Total power dissipation (Pd) | 2.0 W |
| Maximum junction temperature (Tj) | 150 °C |
| Storage temperature range | -55 to +150 °C |
| Input capacitance (Ciss) | 500 pF |
| Output capacitance (Coss) | 120 pF |
| Reverse transfer capacitance (Crs) | 55 pF |
| Turn‑on delay time (t(on)) | 12 ns |
| Rise time (tr) | 18 ns |
| Turn‑off delay time (t(off)) | 40 ns |
| Total gate charge (Qg) | 7.0 nC |
The SH8K32 can withstand up to 60 V between drain and source.
Yes, a built‑in gate‑source protection diode is included to guard against static electricity.
The typical input capacitance is 500 pF.