The document provides specifications for the 2SA1017 and 2SC2363 epitaxial planar silicon transistors, intended for use as pre‑drivers in 40‑50 W audio‑frequency amplifiers. Both PNP and NPN versions are listed with their maximum voltage and current ratings.
Key electrical parameters include collector‑base voltage, collector‑emitter voltage, emitter‑base voltage, collector current limits, power dissipation, and operating temperature range. Package information and a brief note on frequency response are also included. This manual is written in Japanese.
| Collector‑Base Voltage (VcBO) | 120 V |
|---|---|
| Collector‑Emitter Voltage (VCEO) | 100 V |
| Emitter‑Base Voltage (VEB) | 5 V |
| Collector Current (IC) | 50 mA |
| Peak Collector Current | 109 mA |
| Collector Power Dissipation (PC) | 500 mW |
| Operating Temperature Range | -55 °C to 125 °C |
| Maximum Frequency | 130 MHz |
The maximum collector‑emitter voltage is 100 V.
They are rated for operation from –55 °C to +125 °C.
The collector can dissipate up to 500 mW.