This datasheet provides the key specifications for the TO-92MOD 2SA1013 plastic‑encapsulated PNP transistor. It includes ratings such as power dissipation, voltage limits, current gain, and transition frequency, together with typical characteristic curves.
The document lists detailed electrical parameters, including breakdown voltages, saturation voltages, and temperature ranges, allowing designers to assess suitability for their circuits.
| Power dissipation (Pd) | 0.9 W |
|---|---|
| DC current gain (hFE) range | 60‑120, 120‑200, 200‑300 |
| Storage junction temperature range | -55 °C to +150 °C |
The transistor can dissipate up to 0.9 W when the ambient temperature is 25 °C.
The hFE ranges are 60‑120, 120‑200, and 200‑300 depending on collector current.