This handbook provides the electrical characteristics, typical performance curves, and package dimensions for the Toshiba 2SA1006 series (including 1006A, 1006B) and 2SC2336 series (including 2336A, 2336B) silicon epitaxial transistors. The data cover low‑frequency and high‑frequency power‑amplifier applications, with ratings for voltage, current, and power dissipation.
Key sections include absolute maximum ratings, DC current gain, collector‑emitter and collector‑base voltage limits, pulse test conditions, and a detailed list of compatible TO‑series packages. The information is intended for designers and engineers selecting these transistors for audio‑frequency and high‑frequency power amplifier driver stages. This manual is written in Japanese.
| Collector‑Base Voltage (Vcbo) | 180‑250 V |
|---|---|
| Collector‑Emitter Voltage (Vceo) | 180‑3200 V |
| Total Power Dissipation (Ptot) | 25 W |
| Operating Temperature Range (Ta) | -55 °C to +150 °C |
The collector‑base voltage (Vcbo) is rated at 180 V to 250 V.
They are rated for storage temperatures from –55 °C to +150 °C.
The total power dissipation (Ptot) is 25 W.