The 2SK1117 is a silicon N‑channel MOSFET designed for communication and industrial applications that require high‑speed, high‑current switching. It features low on‑resistance, high forward transconductance, low leakage current, and an enhancement‑type structure.
The datasheet lists detailed electrical parameters such as a 600 V drain‑source rating, 0.95 mΩ on‑resistance, 100 nA gate leakage, capacitance values (Ciss ≈ 1400 pF, Coss ≈ 250 pF), and switching times (t_on ≈ 40 ns, t_off ≈ 85 ns). Thermal characteristics include a junction‑to‑case resistance of 12.5 °C/W and a maximum power dissipation of 100 W at 25 °C ambient. This manual is written in Japanese.
| Gate Threshold Voltage (V_GS(th)) | 10 V |
|---|---|
| On‑Resistance (R_DS(on)) | 0.95 mΩ |
| Input Capacitance (C_iss) | 1400 pF |
| Output Capacitance (C_oss) | 250 pF |
| Thermal Resistance Junction‑to‑Case (RθJC) | 12.5 °C/W |
| Maximum Power Dissipation (P_D) | 100 W |
Its on‑resistance is specified as 0.95 mΩ.