DTD113EK is a digital transistor with built-in resistors from ROHM. It has the following features: 1. Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. 2. The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3. Only the on / off conditions need to be set for operation, making the device design easy.
The DTD113EK is a 500 mA, 50 V digital NPN transistor with built-in thin‑film bias resistors, enabling inverter circuits without external resistors. Its structure offers complete isolation for negative biasing and minimizes parasitic effects, simplifying circuit design.
The datasheet lists absolute maximum ratings, electrical characteristics, package dimensions (SMT3, 0.95 mm × 0.95 mm), and typical application circuits for inverters, interfaces, and drivers. It also includes usage notes and legal restrictions on document reproduction.
| Supply voltage (V_EO) | 50 V |
|---|---|
| Input voltage (V_IN) | -10 to +10 V |
| Output current (I_C) | 500 mA |
| Power dissipation (P_D) | 200 mW |
| Junction temperature (T_J) | 150 °C |
| Storage temperature (T_stg) | -55 to +150 °C |
| Package type | SMT3, Taping |
| Package dimensions | 0.95 mm × 0.95 mm |
| Built‑in resistor value (R_i) | 1.0 kΩ |
The DTD113EK is intended for inverter, interface, and driver circuits.
The device can tolerate a supply voltage up to 50 V.
No copying or reproduction of the document is permitted without ROHM’s consent.
It is supplied in an SMT3 package with a taping type.