VTB9412 and 9413 are silicon photodiodes produced by PerkinElmer Optoelectronics. They have high photoelectric characteristics, including high short-circuit current, low dark current, high open-circuit voltage and high breakdown voltage.
The VTB9412 and VTB9413 are small‑area planar silicon photodiodes supplied in a recessed ceramic package. The chip is coated with a clear epoxy layer, offering high shunt resistance and good blue response. They are intended for use in the temperature range of –20 °C to 75 °C (storage) and 20 °C to 75 °C (operating).
Key electrical and opto‑electrical characteristics are provided at 25 °C, including short‑circuit current, open‑circuit voltage, dark current, shunt resistance, junction capacitance, spectral response (320 nm–1100 nm), peak wavelength (920 nm), breakdown voltage (2 V–40 V) and angular response (±50°).
| Package dimensions | 0.067 in × 1.70 in × 0.310 in (1.70 mm × 7.87 mm) |
|---|---|
| Storage temperature | -20 °C to 75 °C |
| Operating temperature | 20 °C to 75 °C |
| Shunt resistance (Rsh) | 7.0 GΩ |
| Dark current (Idark) | 100 pA (typ) |
| Open‑circuit voltage (Voc) | 490 mV |
| Spectral response range | 320 nm – 1100 nm |
| Peak wavelength | 920 nm |
| Breakdown voltage | 2 V – 40 V |
| Angular response (±50°) | ±50° |
| Noise Equivalent Power (NEP) | 3.0×10⁻⁴ W/√Hz (typ) |
| Specific detectivity (D*) | 4.2×10¹³ cm·Hz½/W (typ) |
The devices can be stored from –20 °C up to 75 °C.
They respond to light between 320 nm and 1100 nm.
Typical dark current is 100 pA at 0 V bias.
The peak spectral response occurs at 920 nm.