This document introduces the characteristics and features of QFET products, including the features, advantages and applications of QFET products, and analyzes the market for QFET products.
The FQA90N15 is an N‑Channel enhancement mode power MOSFET built with Fairchild's planar stripe DMOS technology. It is designed for low‑voltage applications such as audio amplifiers, DC‑DC converters, and motor control, offering low on‑state resistance and fast switching.
Key specifications include a 150 V drain‑source rating, 90 A continuous drain current at 25 °C, 360 A pulsed current capability, typical on‑resistance of 0.018 Ω at VGS = 10 V, and a maximum junction temperature of 175 °C. The device is supplied in a TO‑3P package with detailed thermal resistance data.
| Drain‑Source Voltage (VDS) | 150 V |
|---|---|
| Continuous Drain Current (ID) at 25 °C | 90 A |
| On‑Resistance (RDS(on)) typical | 0.018 Ω @ VGS = 10 V |
| Low Gate Charge typical | 220 nC |
| Package | TO‑3P |
The device can handle a continuous drain current of 90 A at a case temperature of 25 °C.
Typical on‑resistance is 0.018 Ω when VGS is 10 V.
The MOSFET is supplied in a TO‑3P package.