The CHA7010 is a high frequency GaInP HBT monolithic microwave integrated circuit with a maximum output power of 10W and a linear gain of 18dB. Its operating frequency range is 8.4-10.4GHz.
The CHA7010 is a monolithic two‑stage GaAs high‑power amplifier designed for X‑band applications. It delivers up to 10 W output power, provides a linear gain greater than 18 dB at 10 GHz, and achieves a power‑added efficiency above 35 % using a GaInP HBT process with on‑chip bias control and high‑impedance pulse interfaces.
The datasheet lists the electrical characteristics (operating frequency 8.4‑10.4 GHz, input/output return loss, supply voltage 9 V, quiescent current 2.4 A, temperature range –30 °C to +80 °C), typical measured performance, chip dimensions (4.74 × 4.36 × 0.1 mm), pad allocation, pinout, and assembly recommendations for thermal and electrical integration.
| Operating frequency range | 8.4‑10.4 GHz |
|---|---|
| Saturated output power | 10 W |
| Linear gain | >18 dB @ 10 GHz |
| Power‑added efficiency (PAE) | >35 % @ 10 GHz |
| Chip size | 4.74 × 4.36 × 0.1 mm |
| Input Return Loss | 8‑12 dB |
| Output Return Loss | 6‑12 dB |
| Supply voltage (Ve) | 9 V |
| Quiescent current (Ic) | 2.4 A |
| Operating temperature range | -30 °C to +80 °C |
The CHA7010 can deliver a saturated output power of 10 W (40 dBm).
It provides a linear gain greater than 18 dB at 10 GHz, with typical gain of 14‑18 dB across the band.
The device operates from a 9 V supply and draws about 2.4 A of quiescent current.
The chip measures 4.74 mm × 4.36 mm with a thickness of 0.1 mm.