The BUZ 58 is an N‑channel enhancement‑mode MOSFET supplied in a TO‑238AA plastic package with an insulated metal base plate. It is intended for high‑voltage applications and includes detailed electrical and thermal parameters.
Key specifications include a 1000 V drain‑source rating, 4.2 A continuous drain current, 2 mΩ on‑resistance, and a maximum power dissipation of 83.3 W. The document also lists static and dynamic ratings, typical capacitances, and thermal impedance curves for design reference. This manual is written in German.
| Drain‑source voltage (VDS) | 1000 V |
|---|---|
| Continuous drain current (ID) | 4.2 A |
| On‑resistance (RDS(on)) | 2.00 mΩ |
| Maximum power dissipation (PD) | 83.3 W |
| Gate threshold voltage (VGS(th)) | 2.1‑3.0 V |
| Package | TO‑238AA plastic |
The BUZ 58 can withstand up to 1000 V between drain and source.
The device is rated for a continuous drain current of 4.2 A at 25 °C.
It can dissipate a maximum of 83.3 W under the specified conditions.
The typical on‑state resistance is 2.00 mΩ.