The 2SK595 is an N‑Channel junction silicon FET designed especially for audio and telephone capacitor microphone use. It offers excellent voltage and transient characteristics and is fabricated with the FBET process.
Key specifications include a 20 V gate‑to‑drain rating, 1 mA drain current, 3.5 pF input capacitance at 1 MHz, and a junction temperature limit of 125 °C. The document also provides case‑outline dimensions for the TO‑92 package and a test circuit for performance verification.
| Gate to Drain Voltage (Vgd) | 20 V |
|---|---|
| Drain Current (Id) | 1 mA |
| Input Capacitance (Ciss) | 3.5 pF |
| Junction Temperature (Tj) | 125 °C |
| Allowable Power Dissipation (Pd) | 100 µW |
The maximum gate‑to‑drain voltage is 20 V.
The input capacitance is 3.5 pF at 1 MHz.
The device is rated for a drain current of 1 mA.
The maximum junction temperature is 125 °C.