This document is about querying PG1001 suppliers. It describes the features and characteristics of the PG1001 product.
This interim bulletin from PIRGO Electronics lists the electrical characteristics of the PG1001‑PG1017 series of silicon planar power transistors. It includes maximum voltage ratings, current limits, temperature ranges, and power dissipation data.
The document also gives derating factors, pulsed‑measurement limits, and storage specifications, allowing designers to select the appropriate part and ensure reliable operation under specified conditions.
| Collector‑Base Voltage (Vcb) | 80‑170 V |
|---|---|
| Collector‑Emitter Voltage (Vce) | 60‑700 V |
| Collector Current (Ic) | 2 A |
| Base Current (Ib) | 0.5 A |
| Storage Temperature | -65 °C to 200 °C |
| Operating Junction Temperature | -65 °C to 200 °C |
| Power Dissipation @ 100 °C | 4 W |
| Linear Derating Factor | 40 mW/°C |
| Pulsed Measurement Limit | PW < 330 µs, < 2 % duty |
The collector‑base voltage ranges from 80 V up to 170 V depending on the specific part.
The maximum collector current is 2 A.
They can be stored from –65 °C to 200 °C.
The device can dissipate 4 W at a 100 °C case temperature.