The MX66C1024 is a high performance, extremely low power CMOS Static Random Access Memory organized as 131,072 words by 8 bits and operates at 5.0V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.005uA and maximum access time of 70ns and 100ns. Easy memory expansion is provided by an active LOW chip enable (CE1), an active HIGH chip enable (CE2), and active LOW output enable (OE) and three-state output drivers. The MX66C1024 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The MX66C1024 is available in the JEDEC standard 32 pin SOP, STSOP and TSOP.
The MX66C1024 is a 5 V low‑power CMOS SRAM organized as 128 K × 8 bits. It offers a maximum write current of 45 mA, a read current of 2 mA, and a typical standby current of 0.6 µA. Access time is specified as 70 ns (max) and the device includes automatic power‑down when deselected.
The datasheet provides detailed pin configurations, electrical characteristics, absolute maximum ratings, data‑retention specifications, and package options (SOP‑32, TSOP‑32, etc.). Operating temperature ranges from –40 °C to +70 °C for commercial use and –60 °C to +150 °C for industrial storage, with a data‑retention voltage as low as 1.2 V.
| Write Current (max) | 45 mA |
|---|---|
| Read Current (max) | 2 mA |
| Standby Current (typ) | 0.6 µA |
| Access Time (max) | 70 ns |
| Power Dissipation | 1.0 W |
| Storage Temperature (industrial) | -60 °C to +150 °C |
| Data Retention Voltage | 1.2 V |
The maximum write current is 45 mA.
Typical standby current is 0.6 µA.
The access time is specified as 70 ns maximum.