COMSET BDX66 series devices are high current power darlingtons designed for power amplification and switching applications.
The BDX66 family of high‑current power Darlington transistors is designed for power‑amplification and switching applications. The handbook lists the absolute maximum ratings, thermal and electrical characteristics, and mechanical dimensions for each variant (BDX66, BDX66A, BDX66B, BDX66C).
Key data include collector‑emitter, collector‑base and emitter‑base voltage limits, maximum collector current, power dissipation, junction temperature range, thermal resistance, and package dimensions. The information is organized in concise tables for quick reference by designers and engineers.
| Collector‑Emitter Voltage (VCE) | -80 V (BDX66A) |
|---|---|
| Collector‑Base Voltage (VCB) | 100 V (BDX66B) |
| Collector Current (IC) | 16 A (BDX66B) |
The BDX66A transistor is rated for a maximum collector‑emitter voltage of -80 V.