The 2N60L is a high voltage MOSFET from Unisonic Technologies that is designed to have fast switching time, low gate charge, low on-state resistance, and high avalanche characteristics. This power MOSFET is typically used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters, and bridge circuits.
The 2N60L is a high‑voltage N‑channel power MOSFET designed for fast switching, low gate charge, and rugged avalanche performance. It is suited for high‑speed switching in power supplies, PWM motor controls, DC‑DC converters, and bridge circuits.
The document lists absolute maximum ratings, thermal data, electrical characteristics, and typical test waveforms. It also details ordering numbers for various TO‑220, TO‑220F, TO‑251, and TO‑252 packages, including lead‑free options.
| Drain‑Source Voltage (max) – 2N60L‑A | 800 V |
|---|---|
| Drain‑Source Voltage (max) – 2N60L‑B | 650 V |
| Gate‑Source Voltage (max) | +30 V |
| Continuous Drain Current (Ic) | 2 A |
| Pulsed Drain Current (Ip) | 8 A |
| Total Gate Charge (Qg, typical) | 9 nC |
| On‑Resistance (Rds(on), typical at Vgs=10 V) | 3.8 mΩ |
The 2N60L‑A version is rated for 800 V and the 2N60L‑B version for 650 V drain‑source voltage.
The device can handle a continuous drain current of 2 A at 25 °C.