This document describes the features and characteristics of the BB837 / BB857 silicon tuning diode, which is suitable for SAT-indoor-units. It has a high capacitance ratio, low series resistance, and excellent uniformity and matching.
The document provides specifications for the BB837 and BB857 silicon tuning diodes, including package types, maximum ratings, and electrical characteristics. It is intended for designers of SAT‑indoor units who need high capacitance ratio and low series resistance components.
Key sections cover maximum voltage and current ratings, operating temperature limits, diode capacitance at various bias voltages and frequencies, and capacitance‑ratio data. Graphs of normalized diode capacitance versus temperature are also included.
| Diode reverse voltage (Vr) | 30 V |
|---|---|
| Peak reverse voltage (Vem) | 35 V |
| Forward current (If) | 20 mA |
| Operating temperature range | -55 °C … 150 °C |
| Storage temperature range | -55 °C … 150 °C |
| Diode capacitance at 1 V, 1 MHz | 6 pF |
| Diode capacitance at 25 V, 1 MHz | 0.5 pF |
| Capacitance ratio Cr4/Cro5 | 10.2 |
| Series resistance | 1.5 Ω |
The maximum reverse voltage is 30 V.
They are rated for a forward current of 20 mA.
They operate from –55 °C up to 150 °C.
The capacitance is approximately 6 pF.