This document describes the features and characteristics of the BAT54S2 small signal Schottky diode produced by CYStek. The diode has a low forward voltage drop and a very small package, making it suitable for applications such as ultra high-speed switching, voltage clamping, protection circuits, and blocking diodes.
The BAT54S2 is a planar silicon Schottky barrier diode offered in a very small SOD‑323 surface‑mount package. It features a guard‑ring protected structure, low forward voltage drop, and is suited for ultra‑high‑speed switching, voltage clamping, and protection circuits such as blocking diodes.
The datasheet lists absolute maximum ratings, electrical characteristics, thermal data, characteristic curves, and detailed package dimensions. Key parameters include a 30 V reverse voltage, 200 mA continuous forward current, and a 200 mW power dissipation limit, all in a compact SOD‑323 footprint.
| Reverse Voltage (VR) | 30 V |
|---|---|
| Continuous Forward Current (IF) | 200 mA |
| Repetitive Peak Forward Current (IFRM) | 300 mA |
| Non‑repetitive Peak Forward Current (IFSM) | 600 mA |
| Total Power Dissipation (Ptot) | 200 mW |
| Storage Temperature (Tstg) | -65 °C to +150 °C |
| Junction Temperature (Tj) | 125 °C |
| Reverse Leakage Current | 2 pA (at 25 V) |
| Diode Capacitance | 10 pF (1 MHz) |
| Thermal Resistance (Rθj‑a) | 635 K/W |
| Package Type | SOD‑323 |
| Package Dimension A (length) | 0.0630–0.0709 in (1.60–1.80 mm) |
The diode can withstand a continuous reverse voltage of up to 30 V.
It is rated for a continuous forward current of 200 mA.
The device is supplied in an SOD‑323 surface‑mount package.
The reverse leakage current is specified as 2 pA at 25 V.